MTP60N05, MTP60N06, MTP60N06HD Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:09+ D/C:TO
MTP60N05, MTP60N06, MTP60N06HD Datasheet download
Part Number: MTP60N05
MFG: MOT/ON
Package Cooled: 09+
D/C: TO
MFG:MOT/ON Package Cooled:09+ D/C:TO
MTP60N05, MTP60N06, MTP60N06HD Datasheet download
MFG: MOT/ON
Package Cooled: 09+
D/C: TO
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PDF/DataSheet Download
Datasheet: MTP60N05
File Size: 170081 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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PDF/DataSheet Download
Datasheet: MTP60N06
File Size: 222370 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTP60N06HD
File Size: 222370 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
50 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
50 |
Vdc |
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
60 42 180 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =60Apk, L = 0.3mH, RG = 25) |
EAS |
540 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
60 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 30 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
60 42.3 180 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =60Apk, L = 0.3mH, RG = 25) |
EAS |
540 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
60 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±30 |
|
Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
60 42.3 180 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25) |
EAS |
540 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |