MTP6N60, MTP6N60E, MTP6P20 Selling Leads, Datasheet
MFG:TO-220 Package Cooled:ST D/C:03+
MTP6N60, MTP6N60E, MTP6P20 Datasheet download
Part Number: MTP6N60
MFG: TO-220
Package Cooled: ST
D/C: 03+
MTP6N60, MTP6N60E, MTP6P20
- Table of contents:
Info of MTP6N60
Info of MTP6N60E
Info of MTP6P20
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About MTP6N60
PDF/DataSheet Download
Datasheet: MTP6N60
File Size: 157264 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About MTP6N60E
PDF/DataSheet Download
Datasheet: MTP6N60E
File Size: 160474 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP6P20E
PDF/DataSheet Download
Datasheet: MTP6P20E
File Size: 221279 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTP6N60 Maximum Ratings
|
Symbol |
Rating |
Value
|
Unit |
|
VDSS |
Drain-source Voltage (VGS = 0) |
600 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 |
V |
|
VGS |
Gate-source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
6.8 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.2 |
A |
|
IDM(`) |
Drain Current (pulsed) |
30 |
A |
|
Ptot |
Total Dissipation at Tc = 25°C |
125 |
W |
| Derating Factor |
1 |
W/°C | |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
MTP6N60 Features
· TYPICAL RDS(on) = 1W
· AVALANCHE RUGGED TECHNOLOGY
· 100% AVALANCHE TESTED
· REPETITIVE AVALANCHE DATA AT 100oC
· APPLICATION ORIENTED CHARACTERIZATION
· AVALANCHE RUGGED TECHNOLOGY
· 100% AVALANCHE TESTED
· REPETITIVE AVALANCHE DATA AT 100oC
· APPLICATION ORIENTED CHARACTERIZATION
MTP6N60 Typical Application
·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWERSUPPLIES (SMPS)
·CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
·SWITCH MODE POWERSUPPLIES (SMPS)
·CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
MTP6N60E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP6N60E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
600 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.6 18 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc IL =2.0Apk, L = 10mH, RG = 25) |
EAS |
405 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTP6N60E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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