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MTP75N03HDL, MTP75N05, MTP75N05E

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MFG:ON  Package Cooled:TO-220  D/C:1

MTP75N03HDL, MTP75N05, MTP75N05E Picture

MTP75N03HDL, MTP75N05, MTP75N05E Datasheet download

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Part Number: MTP75N03HDL

 

MFG: ON

Package Cooled: TO-220

D/C: 1

 

 

 
 
 
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  • MTP75N03HDL

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  • Abenic   China
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  • MTP10N05

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About MTP75N03HDL

PDF/DataSheet Download

Datasheet: MTP75N03HDL

File Size: 241193 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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  • MTP10N06

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  • MTP10N06E

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  • MTP10N08

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  • MTP10N10

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  • MTP10N10E

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About MTP75N05HD

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Datasheet: MTP75N05HD

File Size: 219145 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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  • MTP10N06

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  • MTP10N10

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  • MTP10N10E

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  • MTP10N10ELG

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  • MTP10N12

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  • MTP10N12L

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About MTP 3-Phase Rectifier Series

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Datasheet: MTP 3-Phase Rectifier Series

File Size: 124897 KB

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MTP75N03HDL General Description

This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

MTP75N03HDL Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
25
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
25
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
75
59
225
Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =75Apk, L = 0.1mH, RG = 25)
EAS
1250
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient ,when mounted with the minimum recommended pad size
RJC
RJA
1.0
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

MTP75N03HDL Features

• Ultra Low RDS(on), HighCell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified

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