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MTP8P20, MTP8P25, MTP9N25

Table of contents:
Info of MTP8P20
Info of MTP8P25
Info of MTP9N25

MTP8P20, MTP8P25, MTP9N25 Selling Leads, Datasheet

MFG:ON Package Cooled:TO-220 D/C:03+

MTP8P20, MTP8P25, MTP9N25 Datasheet download

Five Points

Part Number: MTP8P20

MFG: ON

Package Cooled: TO-220

D/C: 03+

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MTP9N25 General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP9N25 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	250	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	250	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc VPK
Drain Current - Continuous - Continuous@ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	9.0 5.7 32	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	80 0.64	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =80 Vdc, V_GS = 10Vdc, PEAK I_L =9.0Apk, L = 3.0mH, R_G = 25)	E_AS	122	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.56 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP9N25 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSSand V_DS(on) Specified at Elevated Temperature

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