MTY140N100E, MTY14N100, MTY14N100E Selling Leads, Datasheet
MFG:ON Package Cooled:03+/04+ D/C:TO3PL
MTY140N100E, MTY14N100, MTY14N100E Datasheet download
Part Number: MTY140N100E
MFG: ON
Package Cooled: 03+/04+
D/C: TO3PL
MTY140N100E, MTY14N100, MTY14N100E
- Table of contents:
Info of MTY140N100E
Info of MTY14N100
Info of MTY14N100E
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About MTY100N10E
PDF/DataSheet Download
Datasheet: MTY100N10E
File Size: 221821 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTY14N100
PDF/DataSheet Download
Datasheet: MTY14N100
File Size: 238355 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTY14N100E
PDF/DataSheet Download
Datasheet: MTY14N100E
File Size: 238355 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTY14N100 General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTY14N100 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
1000 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1000 |
Vdc |
| GatetoSource Voltage - Continuous - Single Pulse (tp 50 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ Tc = 25°C - Single Pulse (tp 10 s) |
ID ID IDM |
14 8.7 49 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.4 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =14 Apk, L =10 mH, RG = 25) |
EAS |
980 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.42 30 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
MTY14N100 Features
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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