MTY30N50, MTY30N50E, MTY32N25E/D Selling Leads, Datasheet
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MTY30N50, MTY30N50E, MTY32N25E/D Datasheet download
Part Number: MTY30N50
MFG: --
Package Cooled: TO-3P
D/C: .
MTY30N50, MTY30N50E, MTY32N25E/D
- Table of contents:
Info of MTY30N50
Info of MTY30N50E
Info of MTY32N25E/D
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About MTY30N50
PDF/DataSheet Download
Datasheet: MTY30N50
File Size: 243678 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTY30N50E
PDF/DataSheet Download
Datasheet: MTY30N50E
File Size: 243678 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTY100N10E
PDF/DataSheet Download
Datasheet: MTY100N10E
File Size: 221821 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTY30N50 General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTY30N50 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive(tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous @ Tc = 25°C - Single Pulse (tp 10 s) |
ID IDM |
30 80 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.38 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =30 Apk, L =10 mH, RG = 25) |
EAS |
3000 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.42 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
MTY30N50 Features
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTY30N50E General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTY30N50E Maximum Ratings
| Rating | Symbol | Value | Unit |
| DraintoSource Voltage | VDSS | 500 | Vdc |
| DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 500 | Vdc |
| GatetoSource Voltage - Continuous |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous @ TC = 25°C Drain Current - Single Pulse (tp 10 s) |
ID IDM |
30 80 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.38 |
Watts |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25) |
EAS | 300 | mJ |
| Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.42 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds | TL | 260 | °C |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
MTY30N50E Features
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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