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MTY20N50E, MTY20N50E/D, MTY25N

MTY20N50E, MTY20N50E/D, MTY25N Selling Leads, Datasheet

MFG:ON  Package Cooled:05+/06+  D/C:TO3PL

MTY20N50E, MTY20N50E/D, MTY25N Picture

MTY20N50E, MTY20N50E/D, MTY25N Datasheet download

Five Points

Part Number: MTY20N50E

 

MFG: ON

Package Cooled: 05+/06+

D/C: TO3PL

 

 

 
 
 
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About MTY20N50E

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Datasheet: MTY20N50E

File Size: 85822 KB

Manufacturer: ON SEMICONDUCTOR

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MTY20N50E/D Suppliers

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About MTY20N50E/D

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Datasheet: MTY20N50E/D

File Size: 188224 KB

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MTY25N Suppliers

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About MTY25N60E

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Datasheet: MTY25N60E

File Size: 242680 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTY20N50E General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTY20N50E Maximum Ratings

Rating Symbol Value Unit
DraintoSource Voltage VDSS 500 Vdc
DraintoGate Voltage (RGS = 1.0 MW) VDGR 500 Vdc
GatetoSource Voltage - Continuous
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
Drain Current - Continuous @ 100°C
Drain Current - Single Pulse (tp 10 s)

ID
ID
IDM
20
13.9
60
Adc
Apk
Total Power Dissipation
Derate above 25°C

PD
250
2.0
Watts
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25)
EAS 2000 mJ
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RqJC
RqJA
0.50
40
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds TL 260 °C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C

MTY20N50E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

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