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NTP75N03R, NTP75N03RG, NTP75N06

Table of contents:
Info of NTP75N03R
Info of NTP75N03RG
Info of NTP75N06

NTP75N03R, NTP75N03RG, NTP75N06 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:2008+ D/C:07+

NTP75N03R, NTP75N03RG, NTP75N06 Datasheet download

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Part Number: NTP75N03R

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: 2008+

D/C: 07+

Description: MOSFET N-CH 60V 75A TO220AB

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NTP75N03R Parameters

Technical/Catalog Information	NTP75N03R
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	9.7A
Rds On (Max) @ Id, Vgs	8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1333pF @ 20V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13.2nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP75N03R NTP75N03R NTP75N03ROS ND NTP75N03ROSND NTP75N03ROS

NTP75N03R Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	25	V_dc
Gate−to−Source Voltage − Continuous	V_GS	±20	V_dc
Thermal Resistance − Junction−to−Case Total Power Dissipation @ T_C= 25 Drain Current − Continuous @ T_C= 25 − Single Pulse (t_p10 s)	R_JC P_D I_D I_DM	1.68 74.4 75 225	/W W A A
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ T_A= 25 Drain Current − Continuous @ T_A= 25	R_JA P_D I_D	60 2.08 12.6	/W W A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ T_A= 25 Drain Current − Continuous @ T_A = 25	R_JA P_D I_D	100 1.25 9.7	/W W A
Operating and Storage Temperature Range	T_J, T_stg	−55 to +150
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J= 25 (V_DD = 30 Vdc, V_GS = 10 V_dc, I_L = 12 A_pk, L = 1 mH, R_G = 25)	E_AS	71.7	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	T_L	260

1. When surface mounted to an FR4 board using 1 inch pad size,(Cu Area 1.127 in²).
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in²).

NTP75N03R Features

• Planar HD3e Process for Fast Switching Performance
• Low R_DS(on) to Minimize Conduction Loss
• Low C_issto Minimize Driver Loss
• Low Gate Charge

NTP75N03R Connection Diagram

NTP75N03RG Parameters

Technical/Catalog Information	NTP75N03RG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	9.7A
Rds On (Max) @ Id, Vgs	8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1333pF @ 20V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13.2nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTP75N03RG NTP75N03RG NTP75N03RGOS ND NTP75N03RGOSND NTP75N03RGOS

NTP75N06 Parameters

Technical/Catalog Information	NTP75N06
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 37.5A, 10V
Input Capacitance (Ciss) @ Vds	4510pF @ 25V
Power - Max	214W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP75N06 NTP75N06 NTP75N06OS ND NTP75N06OSND NTP75N06OS

NTP75N06 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	60	Vdc
Drain−to−Gate Voltage (R_GS = 10 M)	V_DGR	60	Vdc
Gate−to−Source Voltage − Continuous − Non−Repetitive (t_p10 ms)	V_GS V_GS	±20 ±30	Vdc
Drain Current − Continuous @ T_A = 25 − Continuous @ T_A = 100 − Single Pulse (t_p10 µs)	I_D I_D I_DM	75 50 255	Adc Apk
Total Power Dissipation @ T_A = 25 Derate above 25 Total Power Dissipation @ T_A = 25(Note 1)	P_D	214 1.4 2.4	W W/ W
Operating and Storage Temperature Range	T_J, T_stg	−55 to +175
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25 (V_DD = 75 Vdc, V_GS = 10 Vdc, L = 0.3 mH I_L(pk) = 55 A, V_DS = 60 Vdc)	E_AS	884	mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1)	R_JC R_JA	0.7 62.5	/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

NTP75N06 Features

• Pb−Free Packages are Available

NTP75N06 Typical Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

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