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STE53NA50, STE53NC50, STE6596DIE2

Table of contents:
Info of STE53NA50
Info of STE53NC50
Info of STE6596DIE2

STE53NA50, STE53NC50, STE6596DIE2 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:ST D/C:1U53A500V

STE53NA50, STE53NC50, STE6596DIE2 Datasheet download

Five Points

Part Number: STE53NC50

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: ST

D/C: 1U53A500V

Description: MOSFET N-CH 500V 53A ISOTOP

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STE53NA50 Maximum Ratings

Symbol	Parameter	RATING	Unit
V_DS	Drain-source Voltage (V_GS=0)	500	V
V_DGR	Drain- gate Voltage (R_GS =20k)	500	V
V_GS	Gate-source Voltage	± 30	V
I_D	Drain Current (continuous) at Tc =25	53	A
I_D	Drain Current (continuous) at Tc =100	33	A
I_DM(*) P_tot	Drain Current (pulsed) Total Dissipation at Tc =25 Derating Factor	212 460 3.68	A
			W
			W/
T_stg	Storage Temperature	-55 to 150
T_j	Max. Operating Junction Temperature	150
V_ISO	Insulation Withhstand Voltage (AC-RMS)	2500	V

STE53NA50 Typical Application

SMPS &UPS
MOTORCONTROL
WELDINGEQUIPMENT
OUTPUTSTAGEFORPWM,ULTRASONIC
CIRCUITS

STE53NC50 Parameters

Technical/Catalog Information	STE53NC50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	53A
Rds On (Max) @ Id, Vgs	80 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds	11200pF @ 25V
Power - Max	460W
Packaging	Tube
Gate Charge (Qg) @ Vgs	434nC @ 10V
Package / Case	ISOTOP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STE53NC50 STE53NC50 497 2776 5 ND 49727765ND 497-2776-5

STE53NC50 General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

STE53NC50 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Drain-source Voltage (VGS = 0)	500	V
V_DGR	Drain- gate Voltage (RGS = 20 kW)	500	V
V_GE	Gate-Emitter Voltage	± 30	V
I_D	Drain Current (continuous) at T_C = 25°C (Steady State)	53	A
I_D	Drain Current (continuous) at T_C= 100°C	33	A
I_{DM (*)}	Drain Current (pulsed)	212	A
P_TOT	Total Dissipation at T_C = 25°C (Steady State)	460	W
	Derating Factor	3.68	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	3	V/ns
VISO	Insulation Winthstand Voltage (AC-RMS)	2500	V
T_j	Operating Junction Temperature	- 65 to 150	°C
T_stg	Storage Temperature	150	°C

STE53NC50 Features

TYPICAL R_DS(on) = 0.07 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED

STE53NC50 Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

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