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The MS2393 is a gold metallized, silicon NPN power transistor. The MS2393 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2393 is packaged in a metal/ceramic p...
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THE MS2285 IS DESIGNED FOR 1030/1090 MHz IFF APPLICATIONS. THE MS2285 CAN BE OPERATED AT DUTY CYCLES UP TO 10% WITH MINIMAL DERATING OF POWER OUTPUT (140W TYPICAL).
Vendor:Other Category:Other
THE MS2284 IS DESIGNED FOR 1030/1090 MHz IFF APPLICATIONS. THE MS2284 CAN BE OPERATED AT DUTY CYCLES UP TO 10% WITH MINIMAL DERATING OF POWER OUTPUT (40W TYPICAL).
Vendor:Other Category:Other
The MS2230004 is designed as one kind of circuit protection thermistors and it has ordering different lead types:inside kinked leads--use-A after ametherm's part # and outside kinked leads--use-B after ametherm's part #(...
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The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.The MS2213 device is capable of operation over a wide range of pulse widths, duty cycles and temp...
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The MS2212 is designed for specialized avionics applications, including JTIDS where power is providedunder pulse formats utilizing short pulse widths and highburst or overall duty cycles.
Mfg:MICREL Vendor:Other Category:Other
The MS2211 is designed for specialized avionics applications,including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
Vendor:Other Category:Other
The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as gro...
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THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND, HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH WITH MODERATED DUTY CYCLE AND PULSE WIDTH CONSTRAINTS SUCH AS GR...
Mfg:APT Pack:(LX)high-frequency Vendor:Other Category:Other
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUT...
Mfg:MSC Pack:SOP D/C:219 Vendor:Other Category:Other
The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is cap...
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The MS2202 is a low power Class C NPN transistor specifically designed for avionics driver applications. This device is capable of withstanding an :1 load VSWR at any phase angle under full rated conditions. Low RF therm...
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Pack:06+ Vendor:APEM Components Category:Switches
SWITCH MICRO-MINI SLIDE
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The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400-500 MHz.
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Mfg:Vishay D/C:08+ Vendor:Other Category:Other
MS21426 Inductors - Military, MIL-PRF-15305 Qualified, Type LT, Molded, Shielded, Miniature
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Mfg:TO-220AC Pack:11650 D/C:Microsemi Vendor:Other Category:Other
Mfg:TO-220AC Pack:11650 D/C:Microsemi Vendor:Other Category:Other
Mfg:JAT Pack:SMB D/C:05+ Vendor:Other Category:Other
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The MS2 crystal has four points of features: (1)Low height SMD package for low frequencies; (2)Frequency range 3.2MHz to 70.0MHZ; (3)Fully RoHS compliant; (4)Standard EIA tape and reel. This device provides an ideal sour...
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Mfg:MOSPEC Pack:5X3.5 D/C:N/A Vendor:Other Category:Other
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Mfg:MOSPEC Pack:SOT D/C:02+ Vendor:Other Category:Other
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MS-166 DC to 11GHz Small coaxial switch for checking, Height of 1.2mm
Vendor:Hirose Electric Co Ltd Category:Connectors, Interconnects
CONN RECEPT COAX SWITCHING SMDMS-162A DC to 10GHz Small coaxial switch for Interface use
Mfg:TO-220AC Pack:11650 D/C:Microsemi Vendor:Other Category:Other
Vendor:Other Category:Other
THE MS1619 IS AN OVERLAY NPN SILICON TRANSISTOR IN A JEDEC TO-39 METAL CASE.THE MS1619 OFFERS EXTREMELY GOOD INTERMODULATION PROPERTIES AND HIGH POWER GAIN. THE DEVICE IS PRIMARILY INTENDED FOR FINAL AND DRIVER STAGES IN...
Mfg:TO-220AC Pack:11650 D/C:Microsemi Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:APT Pack:(LX)high-frequency Vendor:Other Category:Other
THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz CELLULAR...
Vendor:Hirose Electric Co Ltd Category:Connectors
CONN RCPT COAX MS-156HF SMDMS-156HF Coaxial switch for checking (Halogen free)
Vendor:Hirose Electric Co Ltd Category:Connectors
CONN RCPT MS-156 SMD LO PROMS-156C DC to 11GHz, Height of 1.35mm, Coaxial switch for checking
Vendor:Other Category:Other
MS-151NB Interface coaxial connector with switch, built-in interlock
Vendor:Hirose Electric Co Ltd (VA) Category:Connectors
CONN RECEPT MS-151 R/A SMDMS-151C Interface connector with coaxial switch up to 6GHz
Vendor:Other Category:Other
The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstan...
Mfg:HIROSE D/C:04+ Vendor:Other Category:Other
MS-151 is Designed for end user applications requiring redirection of transmission from internal built-in antenna to the external antenna. Small size, lightweight and high reliability makes it ideal for use in 2.4 GHz ba...
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The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions.
Vendor:Other Category:Other
The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1504 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
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The ultra-small MS-147 coaxial switch series was developed for the portable terminal interface and for inspection of microwave boards (substrates) (DC 6GHz) used at high frequencies.
To respond to the development of p...
Vendor:Hirose Electric Co Ltd (VA) Category:Connectors
CONN RECEPT MS-145 SMTMS-145NB Interface coaxial switch
Mfg:APT Pack:(LX)high-frequency Vendor:Other Category:Other
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the en...
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MS-145 is Designed primarily as interface coaxial switch for a mobile phones, they are also used in variety of other applications requiring redirecting of signals when mating with corresponding plug. The mating action re...
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The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions.
Vendor:Other Category:Other
The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
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The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions.
Mfg:TI Pack:QFN14 Vendor:Other Category:Other
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The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold meta...
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The MS1281 is a 28V silicon NPN planar transistor designed primarily for VHF FM broadcast transmitters. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.
Vendor:Other Category:Other
The MS1255 is a 12.5 Volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused emitter resistors to withstand extremely high VSWR under rated operati...
Mfg:APT Pack:00+ D/C:N/A Vendor:Other Category:Other
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
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MS11-CMX DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a DIN Rail (TS-35) mount air-cooled package.
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The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Vendor:Other Category:Other
The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
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