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Mfg:MOTOROLA D/C:2003 Vendor:Other Category:Other
Vendor:Other Category:Other
The MRF9382T1 is silicon lateral FET, N-channel enhancement-mode MOSFET. It is designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
The feature...
Vendor:Other Category:Other
MRF927T3 is Designed for use in low voltage, low current applications at frequencies to 2.0 GHz. Specifically aimed at portable communication devices such as pagers and handheld phones.
Vendor:Other Category:Other
MRF927T1 is Designed for use in low voltage, low current applications at frequencies to 2.0 GHz. Specifically aimed at portable communication devices such as pagers and handheld phones.
Vendor:Other Category:Other
The MRF9210R5 is one kind of 880 MHz, 200 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for l...
Mfg:FREESCALE D/C:07/08+ Vendor:Other Category:Other
MRF9210R3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source ampl...
Mfg:Freescale Pack:NI-880S Vendor:Other Category:Other
MRF9200LSR3 is Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifie...
Mfg:Freescale Pack:NI-880 Vendor:Other Category:Other
MRF9200LR3 is Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier...
Mfg:Freescale Pack:NI-1230S Vendor:Other Category:Other
MRF9180S is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource ampli...
Mfg:Freescale Pack:NI-1230 Vendor:Other Category:Other
MRF9180 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplif...
Mfg:Motorola D/C:01 Vendor:Other Category:Other
MRF917T1 is Designed for low noise, wide dynamic range front end amplifiers, frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and handheld phones.
Mfg:MOT Pack:CAN4 D/C:05+ Vendor:Other Category:Other
MRF914 is Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications.
Mfg:Freescale Pack:NI-780S Vendor:Other Category:Other
MRF9135LSR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource am...
Vendor:Other Category:Other
The MRF9135LR5 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for ...
Mfg:MOT Pack:880MHz 135W 26V LATERAL N-CH PWR MOSFET D/C:07+ Vendor:Other Category:Other
MRF9135LR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amp...
Mfg:MOT Vendor:Other Category:Other
MRF9135L is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource ampli...
Vendor:Other Category:Other
MRF9130LSR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large- signal, common-source ampli...
Mfg:MOT Pack:920-960MHZ 130W 26V D/C:07+ Vendor:Other Category:Other
MRF9130LR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large- signal, common-source amplif...
Vendor:Other Category:Other
The MRF9130 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for lar...
Mfg:MOT Pack:LDMOS POWER TR D/C:07+ Vendor:Other Category:Other
MRF9120R3 is Designed for broadband commercial and industrial applications with frequen- cies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source ...
Mfg:MOT D/C:00+ Vendor:Other Category:Other
MRF9120LR3 is Designed for broadband commercial and industrial applications with frequen- cies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source...
Vendor:Other Category:Other
MRF9100SR3 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier ap...
Mfg:freescale D/C:05+ Vendor:Other Category:Other
MRF9100R3 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier app...
Mfg:Freescale Vendor:Other Category:Other
MRF9100 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier appli...
Mfg:MOT D/C:02+ Vendor:Other Category:Other
MRF9085LSR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common-source...
Mfg:MOTOROLA D/C:05+ Vendor:Other Category:Other
MRF9085LR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common-source ...
Mfg:MOTOROLA D/C:01+ Vendor:Other Category:Other
MRF9080SR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
Vendor:Other Category:Other
The MRF9080R5 is one kind of GSM 900 MHz, 75 W, 26 V lateral N-channel broadband RF power MOSFET that designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for ...
Vendor:Other Category:Other
MRF9080R3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
Vendor:Other Category:Other
MRF9080LSR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
Mfg:Freescale Pack:NI-787 D/C:07+ Vendor:Other Category:Other
Mfg:MOT Vendor:Other Category:Other
MRF9080 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
Vendor:Other Category:Other
MRF9060SR1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier...
Vendor:Other Category:Other
MRF9060R1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier ...
Vendor:Other Category:Other
The MRF9060 is designed as one kind of RF power filed effect transistors (N-channel enhancement-mode lateral MOSFETs) that designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The...
Mfg:MOTOROLA Pack:CAN4 D/C:05+ Vendor:Other Category:Other
The ASI MRF905 is Designed for General Purpose Oscillator Applications.
Mfg:MOT D/C:07+ Vendor:Other Category:Other
MRF9045MR1 is Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source ampli...
Vendor:Other Category:Other
MRF9045MBR1 is Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source ampl...
Vendor:Other Category:Other
Mfg:120 Pack:MOTOROLA Vendor:Other Category:Other
Mfg:MOT Pack:CAN4 D/C:05+ Vendor:Microsemi-PPG Category:Discrete Semiconductor Products
TRANS NPN 15V 30MA TO-72MRF904 is Designed primarily for use IN High Gain, low noise general purpose amplifiers.
Vendor:Other Category:Other
MRF9030SR1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier...
Vendor:Other Category:Other
MRF9030R1 is Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier ...
Vendor:Other Category:Other
The MRF9030 is designed as one kind of RF power filed effect transistors (N-channel enhancement-mode lateral MOSFETs) that designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The...
Mfg:Motorola Pack:Sot-143 D/C:09+ Vendor:Other Category:Other
MRF9011LT1 is Designed primarily for use in highgain, lownoise smallsignal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
Vendor:Other Category:Other
Mfg:MOTOROLA D/C:N/A Vendor:Other Category:Other
MRF9002R2 is Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common-source amplifier app...
Vendor:Other Category:Other
Mfg:MOT Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
TRANS RF 150W 900MHZ NI-860C3
Mfg:MOTOROLA Vendor:Other Category:Other
Mfg:MOT Vendor:Other Category:Other
Mfg:MOTOROLA Vendor:Other Category:Other
Mfg:MOTOROLA Vendor:Other Category:Other
The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz.
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:1 Pack:MOT Vendor:Other Category:Other
Mfg:MOTOROLA Vendor:Other Category:Other
The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.
Mfg:MOT Vendor:Other Category:Other
The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier Applicatons Up to 960 MHz.
Mfg:ASI Pack:230 6L Vendor:Other Category:Other
The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz.
Mfg:MOT Pack:TO-55r D/C:04+ Vendor:Other Category:Other
The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz.
Mfg:MOTOROLA Pack:MODULE D/C:530 Vendor:Other Category:Other
The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.
Vendor:Other Category:Other
The MRF7S35120HSR is one kind of 3100-3500 MHz, 120 W peak, 32 V pulsed lateral N-channel RF power MOSFETs that designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
Features of t...
Vendor:Other Category:Other
The MRF7S19120NR is one kind of 1930-1990 MHz, 36 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications. Also it can be used in Class AB and Class C for all typica...
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 29W TO272-4The MRF7S19100NBR1 is one kind of the 1930-1990 MHz, 29 W AVG., 28 V single W-CDMA lateral N-channel RF power MOSFETs that designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for ...
Mfg:Freescale Pack:NI-780S Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH NI-780SMRF7S19080HSR3 is Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS...
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH NI-780MRF7S19080HR3 is Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/...
Vendor:Other Category:Other
The MRF7S18125BH is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. It can be used in Class AB and Class C for all typical...
Mfg:Asi Vendor:Other Category:Other
The ASI MRF752 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V.
Mfg:Asi Vendor:Other Category:Other
The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V.
Vendor:Other Category:Other
The MRF7S19100NBR1 is one kind of the 10-450 MHz, 1000 W, 50 V lateral N-channel RF power MOSFETs that designed for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for ...
Vendor:Other Category:Other
The MRF6V2010NBR is one kind of 10-450 MHz, 10 W, 50 V lateral N-channel broadband RF power MOSFETs that designed for CW large-signal output and driver applications with frequencies up to 450 MHz. Also this device is un...
Mfg:freescale Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 27W TO-270-4
Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 27W TO-272-4
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 27W TO-270-4
Vendor:Other Category:Other
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO-270-2MRF6S9060NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...
Mfg:MOT Pack:HV6 60W TO272-2N FET D/C:07+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 14W TO-272-2MRF6S9060NBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...
Vendor:Other Category:Other
MRF6S9060MR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...
Vendor:Other Category:Other
MRF6S9060MBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 10W TO-270-2MRF6S9045NR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...
Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 10W TO-272-2MRF6S9045NBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...
Vendor:Other Category:Other
MRF6S9045MR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source ampl...
Vendor:Other Category:Other
MRF6S9045MBR1 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amp...
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780SMRF6S27085HSR3 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...
Vendor:Other Category:Other
The MRF6S27085HSR is one kind of 2700 MHz, 20 W AVG., 28 V single N-CDMA lateral N-channel RF power MOSFETs that designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. It can be used in TDM...
Mfg:Freescale Pack:465-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780MRF6S27085HR3 is Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...
Vendor:Other Category:Other
MRF6S27015NR1 is Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.• Typical Singl...
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
IC MOSFET RF N-CHAN TO270-2 GWMRF6S27015GNR1 is Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.• Typical Sing...
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780SMRF6S23100HSR3 is Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.
Mfg:Freescale Pack:465-06 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 20W NI-780MRF6S23100HR3 is Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.
Mfg:Freescale Pack:465C-02 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 30W NI-880SMRF6S21140HSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...
Vendor:Other Category:Other
The MRF6S21140HS has nine features.(1)characterized with series equivalent large-signal impedance parameters.(2)internally matched for ease of use.(3)qualified up to a maximum of 32 VDD operation.(4)integrated ESD protec...
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CHAN 28V 30W NI-880MRF6S21140HR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio a...
Vendor:Other Category:Other
The MRF6S21140HR is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDMA...
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 23W TO270-4
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 23W TO272-4
Mfg:Freescale Pack:465A-06 Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 23W NI-780SMRF6S21100HSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...
Mfg:FREESCALE D/C:07/08+ Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CHAN 28V 23W NI-780MRF6S21100HR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and ...
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO270-4The MRF6S21060NR1 is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDM...
Vendor:Freescale Semiconductor Category:Discrete Semiconductor Products
MOSFET RF N-CH 28V 14W TO272-4
Mfg:Freescale Pack:465F-04 Vendor:Freescale Semiconductor Category:Transistors, FETs, IGBTs
MOSFET RF N-CH 28V 11.5W NI-400SMRF6S21050LSR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio ...
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