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TC59,TC58V64DC,TC55V040AFT-55,
TC59
Vendor:Cornell Dubilier Electronics (CDE) Category:Capacitors
CAP ALUM 50UF 250V AXIALThe TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced suppl...TC58V64DC
Vendor:Other Category:Other
Features of the TC58V64DC are:(1)organization memory cell array is 258*16k*8,register is 528*8,page size is 528 bytes,block size is (8k+256) bytes;(2)mode read,reset,auto page program,auto block erase,status read;(3)mode...TC58V64BDC
Vendor:Toshiba Category:Memory Cards, Modules
IC 64MBIT NAND FLASH 3V 44-TSOPThe TC58V64BDC is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks. The TC58V64BDC has a 528-byte static r...TC58V64ADC
Vendor:Other Category:Other
The TC58V64ADC is single 3.3V 64M bit NAND electrically erasable and programmable read only memory orgranized as 528 bytes*16 pages*1024 blocks. The feature of TC58V64ADC are as follows: (1)meomory cell array: 528*16 k*8...TC58V32AFT
Vendor:Toshiba Category:Integrated Circuits (ICs)
IC 32MBIT NAND FLASH 3V 44-TSOPThe TC58V32AFT is single volt 32M bit NAND electrically erasable and programmable read only memory orgranized as 528 bytes*16 pages*512 blocks. The feature of TC58V32AFT are as follows: ((1)meomory cell array: 528*8 k*8;...TC58NVG1SxB
Vendor:Other Category:Other
The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The devi...TC58NVG0S3AFT05
Mfg:TOSHIBA Pack:TSOP D/C:0506+ Vendor:Other Category:Other
The TC58NVG0S3AFT05 is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The TC58NVG0S3AFT05 ha...TC58NVG0S3A
Vendor:Other Category:Other
The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The TC58NVG0S3A has a 2112-b...TC58NS256DC
Vendor:Other Category:Other
The TC58NS256DC is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The TC58NS256DC has a 528-byte stat...TC58NS128DC
Vendor:Other Category:Other
The TC58NS128DC is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58NS128DC has a 528-byte stat...TC58FVT641XB-70
Vendor:Other Category:Other
The TC58FVT641XB-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-70 features commands fo...TC58FVT641XB-10
Vendor:Other Category:Other
The TC58FVT641XB-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-10 features commands fo...TC58FVT641FT-70
Mfg:TOSHIBA Pack:TSOP D/C:0140+ Vendor:Other Category:Other
The TC58FVT641FT-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641FT-70 features commands fo...TC58FVT641FT-10
Mfg:10800 Pack:TOS Vendor:Other Category:Other
The TC58FVT641FT-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641FT-10 features commands fo...TC58FVT321
Vendor:Other Category:Other
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands fo...TC58FVT160
Vendor:Other Category:Other
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands ...TC58FVM7T2A
Vendor:Other Category:Other
The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Re...TC58FVM7B2A
Vendor:Other Category:Other
The TC58FVM7B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7B2A features commands for Read, Prog...TC58FVM6T2A
Vendor:Other Category:Other
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read...TC58FVM6B2ATG65
Vendor:Other Category:Other
The TC58FVM6B2ATG65 is designed as one kind of 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory device that features a Simultaneous Read/Write operation so that data can be read during a ...TC58FVM6B2A
Vendor:Other Category:Other
The TC58FVM6B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6B2A features commands for Read, Progra...TC58FVM5T3AFT65
Vendor:Other Category:Other
TC58FVB641XB-70
Mfg:LG Pack:SOP D/C:16 Vendor:Other Category:Other
The TC58FVB641XB-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641XB-70 features commands fo...TC58FVB641XB-10
Vendor:Other Category:Other
The TC58FVB641XB-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641XB-10 features commands fo...TC58FVB641FT-70
Mfg:10800 Pack:TOSH Vendor:Other Category:Other
The TC58FVB641FT-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641FT-70 features commands fo...TC58FVB641FT-10
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58FVB641FT-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641FT-10 features commands fo...TC58DVM92A1FTI0
Mfg:10800 Pack:TOSHIBA Vendor:Other Category:Other
The TC58DVM92A1FTI0 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte stat...TC58DVM92A1FT00
Mfg:7300 Pack:TOS D/C:05+ Vendor:Other Category:Other
The TC58DVM92A1FT00 is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The TC58DVM92A1...TC58DVM72F1FT00
Vendor:Other Category:Other
The TC58DVM72F1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DVM72A1FT00
Mfg:6000 Pack:TOSHIBA Vendor:Other Category:Other
The TC58DVM72A1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DVG02A1FT00
Vendor:Other Category:Other
The TC58DVG02A1FT00 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The TC58DVG02A1FT00 has a 528-...TC58DAM72F1FT00
Vendor:Other Category:Other
The TC58DAM72F1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DAM72A1FT0
Vendor:Other Category:Other
The TC58DAM72A1FT0 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The TC58DAM72A1FT0 uses dual powe...TC58B321FT
Vendor:Other Category:Other
The TC58B321FT is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58B321FT features commands for Read, Pr...TC58B160AFT
Vendor:Other Category:Other
The TC58B160AFT is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58B160AFT features commands for Read, ...TC58512FT
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58512FT is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The TC58512FT has a 528-byte static r...TC58256FTI
Vendor:Other Category:Other
The TC58256FTI is a single 3.3V 256Mbit (276,648,128) bit NAND Electrically Erasable.It has the following features.It is programmable Read-Only Memory organized as 528 bytes*32 pages*2048 blocks.The TC58256FTI has...TC58256FT
Vendor:Other Category:Other
The TC58256FT is single 3.3-V, 256-Mbit NAND electrically erassble and programmable read-only memory organized as 528 bytes * 32pages * 2048 blocks.The feature of TC58256FT are as follows: (1)memory cell array: 528*64K*8...TC58256AFT
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58256AFT is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The TC58256AFT has a 528-byte static...TC5816BFT
Vendor:Other Category:Other
The TC5816BFT is single 5.0-volt 16Mbit NAND electrically erasable and programmable read only memory with spare 64K*8bits. The device is organized as 264 byte*16 pages*512 blocks. The feature of TC5816BFT are as follows:...TC58128AFTI
Mfg:10800 Pack:TOSH Vendor:Other Category:Other
The TC58128AFTI is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58128AFTI has a 528-byte stat...TC58128A
Vendor:Other Category:Other
The TC58128A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58128A has a 528-byte static reg...TC581282AXB
Vendor:Other Category:Other
The TC581282AXB is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC581282AXB has a 528-byte stat...TC581282A
Vendor:Other Category:Other
The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC581282A has a 528-byte static r...TC575002ECTTR
Vendor:Other Category:Other
TC574702ECTTR
Vendor:Other Category:Other
TC573302ECTTR
Mfg:MICROCHIP D/C:08+PBF Vendor:Microchip Technology Category:Integrated Circuits (ICs)
IC REG CONTROLLER 3.3V SOT23A-5TC573002ECTTR
Mfg:MICROCHIP D/C:08+PBF Vendor:Microchip Technology Category:Integrated Circuits (ICs)
IC REG CONTROLLER 3.0V SOT23A-5TC572502ECTTR
Mfg:MICROCHIP D/C:08+PBF Vendor:Microchip Technology Category:Integrated Circuits (ICs)
IC REG CONTROLLER 2.5V SOT23A-5TC57
Vendor:Cornell Dubilier Electronics (CDE) Category:Capacitors
CAP ALUM 30UF 250V AXIALThe TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operat...TC56
Vendor:Other Category:Other
The TC56 is a low supply current (11A typical at VOUT = 3V), low dropout CMOS linear regulator, with a 10V maximum input voltage range. CMOS construction eliminates wasted ground current, typical of bipolar regulators, ...TC55W800XB8
Vendor:Other Category:Other
The TC55W800XB8 is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55W800XB8 operates from a single 2.3 to...TC55W800XB7
Mfg:10000 Pack:TOSHIBA Vendor:Other Category:Other
The TC55W800XB7 is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55W800XB7 operates from a single 2.3 to...TC55W800FT-70
Vendor:Other Category:Other
The TC55W800FT-70 is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operat...TC55W800FT-55
Mfg:TSSOP48 Pack:20 D/C:TOS Vendor:Other Category:Other
The TC55W800FT-55is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operate...TC55W1600FT-70
Mfg:10800 Pack:ST Vendor:Other Category:Other
The TC55W1600FT-70 is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device op...TC55W1600FT-55
Mfg:6000 Pack:TOSHIBA Vendor:Other Category:Other
The TC55W1600FT-55 is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device op...TC55VZM216AJJN08
Vendor:Other Category:Other
The TC55VZM216AJJN08 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, TC55VZM...TC55VZM216AJJN
Vendor:Other Category:Other
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it o...TC55VZM216AFTN12
Mfg:TOSHIBA Pack:0446+ D/C:TSSOP Vendor:Other Category:Other
The TC55VZM216AFTN12 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it oper...TC55VZM216AFTN10
Vendor:Other Category:Other
The TC55VZM216AFTN10 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it oper...TC55VZM216AFTN08
Vendor:Other Category:Other
The TC55VZM216AFTN08 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it oper...TC55VEM416AXBN55
Vendor:Other Category:Other
The TC55VEM416AXBN55 is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3...TC55VEM316AXBN
Vendor:Other Category:Other
The TC55VEM316AXBN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3...TC55VEM208ASTN55
Mfg:TOSHIBA Pack:03+04 D/C:TSSOP Vendor:Other Category:Other
The TC55VEM208ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VEM208ASTN40
Vendor:Other Category:Other
The TC55VEM208ASTN40 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VCM316BTGN55
Vendor:Other Category:Other
The TC55VCM316BTGN55 is designed as one kind of 4,194,304-bit static random access memory (SRAM) device that is organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this ...TC55VCM216ASTN55
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The TC55VCM216ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VCM216ASTN40
Mfg:TOSHIBA D/C:2005+ Vendor:Other Category:Other
The TC55VCM216ASTN40 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VCM208ASTN55
Mfg:TOSHIBA D/C:04+ Vendor:Other Category:Other
The TC55VCM208ASTN55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VCM208ASTN40
Vendor:Other Category:Other
The TC55VCM208ASTN40 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to...TC55VBM416ASGN55
Vendor:Other Category:Other
The TC55VBM416ASGN55 is designed as one kind of 16,777,216-bit static random access memory (SRAM) that is well suited to various microprocessor system applications where high speed, low power and battery backup are requi...TC55VBM416AFTN55
Vendor:Other Category:Other
The TC55VBM416AFTN55 is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device ...TC55VBM316ASTN40,55
Vendor:Other Category:Other
The TC55VBM316ASTN40,55 is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device ...TC55VBM316AFTN
Mfg:TOSHIBA Pack:TSOP D/C:04+ Vendor:Other Category:Other
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device ...TC55VBM316AASTN55
Vendor:Other Category:Other
The TC55VBM316AASTN55 is designed as one kind of 16,777,216-bit static random access memory (SRAM) device that is organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. And this TC55VBM316AASTN55 can be used ...TC55V8512JI-15
Mfg:TOSHIBA Pack:SOJ D/C:09+ Vendor:Other Category:Other
The TC55V8512JI-15 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operate...TC55V8512JI-12
Mfg:10800 Pack:TOSHIBA Vendor:Other Category:Other
The TC55V8512JI-12 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operate...TC55V8512J
Vendor:Other Category:Other
The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates...TC55V8512FTI-15
Mfg:TOSHIBA Pack:TSOP44 D/C:2005+ Vendor:Other Category:Other
The TC55V8512FTI-15 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operat...TC55V8512FTI-12
Mfg:TOSHIBA Pack:TSOP D/C:09+ Vendor:Other Category:Other
The TC55V8512FTI-12 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operat...TC55V8512FT-15
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC55V8512FT-15 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operate...TC55V8512FT-12
Mfg:TOSHIBA Pack:SOP D/C:09+ Vendor:Other Category:Other
The TC55V8512FT-12 is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operate...TC55V8200FT
Vendor:Other Category:Other
The TC55V8200FT is a 16,777,216-bit high-speed static random access memory (SRAM)organized as 2,097,152 words by 8 bits. Features of the TC55V8200FT are:(1)fast access time (the following are maximum values); (2)low-pow...TC55V4400FT
Vendor:Other Category:Other
The TC55V4400FT is a 16,777,216-bit high-speed static random access memory organized as 4,194,304 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from ...TC55V400FF-85
Vendor:Other Category:Other
The TC55V400FF-85 is designed as one kind of 4,194,304-bit static random access memory (SRAM) device that is organized as 524,288 words by 8 bits. And this TC55V400FF-85 is available in a normal pinout plastic 32-pin thi...TC55V400AFT-55
Mfg:10800 Pack:TOSH Vendor:Other Category:Other
The TC55V400AFT-55 is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3...TC55V4000ST-85
Vendor:Other Category:Other
The TC55V4000ST-85 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3....TC55V4000ST-70
Mfg:10800 Pack:TOSHIBA Vendor:Other Category:Other
The TC55V4000ST-70 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3....TC55V4000ST
Vendor:Other Category:Other
The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55V4000ST operates from a single 2.3 to ...TC55V2161FT-85
Vendor:Other Category:Other
The TC55V2161FT-85 is a 2,097,152-bit static radom access memory organized as 131,072 words by 16 bits.Fabricated using toshiba's CMOS silicon gate process technology,this device operates from a single 2.7 to 3.6V power ...TC55V2001STI-10
Vendor:Other Category:Other
The TC55V2001STI-10 is one member of the TC55V2001 family which is designed as the 2,097,152-bit static random access memory (SRAM) organized as 262,144 words by 8 bits. Fabricated using Toshiba's CMOS silicon gate proce...TC55V16256FT-12
Vendor:Other Category:Other
The TC55V16256FT-12 is a 4194304-bit high-speed ststic random access memory (SRAM) organized as 262144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates...TC55V16100FT-10
Vendor:Other Category:Other
The TC55V16100FT-10 is designed as one kind of 16,777,216-bit high speed static random access memory (SRAM) device that is organized as 1,048,576 words by 8 bits. And this TC55V16100FT-10 is available in a normal pinout ...TC55V1403FT-20
Vendor:Other Category:Other
The TC55V1403FT-20 is a 4194304-bit high speed static random access memory, it is possible to change the organization between 4194304 words by 1 bit and 1048576 words by 4 bits. The features of TC55V1403FT-20 are: (1)s...TC55V1001STI-10L
Vendor:Other Category:Other
The TC55V1001STI-10L is one member of the TC55V1001 family which is designed as the 1,048,576-bit static random access memory (SRAM) organized as 262,144 words by 8 bits. Fabricated using Toshiba's CMOS silicon gate proc...TC55V1001STI-10
Vendor:Other Category:Other
The TC55V1001STI-10 is one member of the TC55V1001 family which is designed as the 1,048,576-bit static random access memory (SRAM) organized as 262,144 words by 8 bits. Fabricated using Toshiba's CMOS silicon gate proce...TC55V1001ATRI-10
Vendor:Other Category:Other
The TC55V1001ATRI-10 is designed as one kind of 1048576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. This device operates from a single 2.7 to 3.6 V power supply. Advanced circuit technolo...TC55V040AFT-70
Mfg:TOS Pack:TSOP/40 Vendor:Other Category:Other
The TC55V040AFT-70 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55V040AFT-70 operates from a single 2...TC55V040AFT-55
Mfg:TOSHIBA D/C:04+ Vendor:Other Category:Other
The TC55V040AFT-55 is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this TC55V040AFT-55 operates from a single 2...