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PD6080J5050S2,PD608,PD4436,
PD6080J5050S2
Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
PD608
Mfg:NIEC D/C:2DIO: 60A800V Vendor:Other Category:Other
PD6016
Mfg:NIEC D/C:2DIO: 60A1600V Vendor:Other Category:Other
PD6012
Mfg:NIEC D/C:2DIO: 60A1200V Vendor:Other Category:Other
PD60030S
Vendor:Other Category:Other
The PD60030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source ...PD60030
Vendor:Other Category:Other
The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source m...PD60015S
Vendor:Other Category:Other
The PD60015S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source ...PD60015
Vendor:Other Category:Other
The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source m...PD60004S
Vendor:Other Category:Other
The PD60004S is a common source N-Channel, enhancement- mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. PD60004S operates at 26 V in common ...PD60004
Vendor:Other Category:Other
The PD60004 is a common source N-Channel, enhancement- mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source ...PD60-0015-06S
Vendor:Other Category:Other
M/A-COM's PD60-0015-06S is designed to provide a low loss method of combining signals from six amplifiers or transmitters in a number of cellular bands. High power internal components and an integral heat sink enables th...PD60-0014-04S
Vendor:Other Category:Other
M/A-COM's PD60-0014-04S is designed to provide a low loss method of combining signals from four amplifiers or transmitters in a number of cellular bands. The combiner incorporates high power internal components and an in...PD60-0012-06S
Vendor:Other Category:Other
M/A-COM's PD60-0012-06S is designed to provide a low loss method of combining signals from six amplifiers or transmitters at PCS frequencies. High power internal components and an integral heat sink enables the PD60-0012...PD60-0011-05S
Vendor:Other Category:Other
M/A-COM's PD60-0011-05S is designed to provide a low loss method of combining signals from five amplifiers or transmitters at PCS frequencies. High power internal components and an integral heat sink enables the PD60-001...PD60-0008-02S
Vendor:Other Category:Other
M/A-COM's PD60-0008-02S is designed to provide a low loss method of combining signals from two transmitters at PCS frequencies. High power internal components and an integral heat sink enables the PD60-0008-02S to combin...PD60-0004-05S
Vendor:Other Category:Other
M/A-COM's PD60-0004-05S is designed to provide a low loss method of combining signals from five amplifiers or transmitters in a number of cellular bands. High power internal components and an integral heat sink enables t...PD60-0003-04S
Vendor:Other Category:Other
M/A-COM's PD60-0003-04S is designed to provide a low loss method of combining signals from four transmitters at PCS frequencies. High power internal components and an integral heat sink enables the device to combine non-...PD60-0001-02S
Vendor:Other Category:Other
M/A-COM's PD60-0001-02S is designed to provide a low loss method of combining signals from two amplifiers or transmitters in a number of cellular bands. The combiner incorporates high power internal components and an int...PD5713TK
Vendor:Other Category:Other
The PD5713TK is a CMOS MMIC for wide band SPDT (Single Pole Double Throw) switch which were developed for mobile communications, wireless communications and other general-purpose RF switching application.The PD...PD57070S-E
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
IC TRANS RF PWR LDMOST PWRSO-10The PD57070S-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common sourc...PD57070S
Vendor:Other Category:Other
The PD57070S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common sourc...PD57070-E
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
IC TRANS RF PWR LDMOST PWRSO-10The PD57070-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source...PD57070
Vendor:Other Category:Other
The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source...PD57060
Vendor:Other Category:Other
The PD57060 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 60 W with 14.3 dB gain @ 945 MHz / 28V; (4)new RF plas...PD57045
Vendor:Other Category:Other
The PD57045 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 45 W with 13 dB gain @ 945 MHz / 28 V; (4)new RF plast...PD57030
Vendor:Other Category:Other
The PD57030 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 30 W with 13 dB gain @ 945 MHz / 28 V; (4)new RF plast...PD57018S
Vendor:Other Category:Other
The PD57018S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mod...PD57018
D/C:06+ Vendor:Other Category:Other
The PD57018 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mode...PD57006
Vendor:Other Category:Other
The PD57006 is designed as one kind of common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor that can be used in high gain, broad band commercial and industrial applications. This device oper...PD57002S
Vendor:Other Category:Other
The PD57002S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed f...PD57002-E
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS RF N-CH FET LDMOST PWRSO10The PD57002-E is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 2 W with 15 dB gain @ 960 MHz / 28 V; (4)new RF plas...PD57002
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD57002 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed fo...PD55HB160
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55HB120
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55GB80
Mfg:SANREX D/C:1THY&1DIO: 55A800V Vendor:Other Category:Other
PD55GB40
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55FG80
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55FG40
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55FG160
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55FG120
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55FG
Vendor:Other Category:Other
Power Thyristor/Diode Module PD55FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. ...PD55F80
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55F40
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55F160
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55F120
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD55035
Vendor:Other Category:Other
The PD55035 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V; (4)new RF p...PD55025S
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD55025S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source...PD55025
Mfg:sgs Pack:sgs D/C:dc02 Vendor:Other Category:Other
The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...PD55015S
Mfg:ST Pack:SOP D/C:01+ Vendor:Other Category:Other
The PD55015S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. PD55015S operates at 12V in common sou...PD55015
Mfg:500 Pack:ST D/C:03+ Vendor:Other Category:Other
The PD55015 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode...PD55008S
Vendor:Other Category:Other
The PD55008S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. PD55008S is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common sour...PD55008L
Mfg:ST Pack:QFN D/C:07+ Vendor:Other Category:Other
The PD55008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...PD55008
Mfg:SGS D/C:05+ Vendor:Other Category:Other
The PD55008 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode...PD55003S
Mfg:STM D/C:2004 Vendor:Other Category:Other
The PD55003S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source...PD55003L
Mfg:ST Pack:QFN D/C:08+ Vendor:Other Category:Other
The PD55003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source m...PD55003-01
Vendor:Other Category:Other
The PD55003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source ...PD55003
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The PD55003 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...PD54008S
Vendor:Other Category:Other
The PD54008S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mode...PD54008L
Mfg:ST Pack:QFN D/C:08+ Vendor:Other Category:Other
The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source m...PD54008
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD54008 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mode ...PD54003S
Vendor:Other Category:Other
The PD54003S is a common source N-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source m...PD54003L
Mfg:ST Pack:QFN D/C:07+ Vendor:Other Category:Other
The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source m...PD54003-01
Vendor:Other Category:Other
The PD54003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source ...PD54003
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD54003 is a common source N-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mo...PD50F6
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD50F4
Mfg:NIEC D/C:2DIO: 50A400V Vendor:Other Category:Other
PD50F2
Vendor:Other Category:Other
The PD50F2 is a FRD MODULE 50A/200V/trr:80nsec. Features of the PD50F2 are:(1)Isolated Base ; (2)Dual Diode Cathode Common ; (3)Ultra Fast Recovery ; (4)High Surge Capability ; (5)UL Recognized, File No. E187184. The a...PD505
Vendor:Other Category:Other
PD505 is a type of stanley photo darlington transistor which has three unique features: The first one is high photo current. The second one is best suitable for photointerrupter. The third one is efficient when used in c...PD504
Vendor:Other Category:Other
PD504 is a type of stanley photo darlington transistor which has three unique features: The first one is high photo current. The second one is best suitable for photointerrupter. The third one is efficient when used in c...PD502
Vendor:Other Category:Other
PD502 is a type of stanley photo darlington transistor which has two unique features: The first one is midget resin package of 3.4 mm ida, permits use in limited space.The second one is high photo current.Besides, it als...PD500-1xx
Vendor:Other Category:Other
The PD500-1xx is an InGaAs photodiode with a photosensitive region 500m in diameter. PD500-1xx is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.P...PD500-0xx
Vendor:Other Category:Other
The PD500-0xx is an InGaAs photodiode with a photosensitive region 500m in diameter. It is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.Planar s...PD500
Vendor:Other Category:Other
The PD500 is an InGaAs photodiode with a photosensitive region 500m in diameter. It is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.Planar semic...PD4W18-59LF
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 1.711.99 GHz The PD4W18-59LF is a monolithic four-way in-phase hybrid junction tuned for the 1.711.99 GHz band. It offers low loss, high isolation, good input/output matching and exce...PD4W18-12LF
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 1.711.99 GHz The PD4W18-12LF is a monolithic four-way in-phase hybrid junction tuned for the 1.711.99 GHz band. PD4W18-12LF offers low loss, high isolation, good input/output matching...PD4W09-59LF
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 0.810.96 GHz The PD4W09-59LF is a monolithic four-way in-phase hybrid junction tuned for the 0.810.96 GHz band. PD4W09-59LF offers low loss, high isolation, good input/output matching...PD4W09-12LF
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 0.810.96 GHz The PD4W09-12LF is a monolithic four-way in-phase hybrid junction tuned for the 0.810.96 GHz band. PD4W09-12LF offers low loss, high isolation, good input/output matching...PD4M441L
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD4M441H
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD4M440L
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
PD4M440H
Pack:IXYS D/C:2MOS: 30A500V Vendor:Other Category:Other
PD49PI
Mfg:SHARP Pack:. D/C:07+ Vendor:Other Category:Other
PD488588FF-C80-40
Vendor:Other Category:Other
The PD488588FF-C80-40 (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high ...PD488588
Vendor:Other Category:Other
The PD488588 is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latenc...PD4859J5050S2
Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
PD481PI
Mfg:SHARP Pack:DIP-2 D/C:01+ Vendor:Other Category:Other
PD480PI1
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
PD480PI
Mfg:SHARP D/C:3 Vendor:Other Category:Other
PD4707
Vendor:Other Category:Other
PD4707 is designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.PD45128841-T
Vendor:Other Category:Other
The PD45128841-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...PD45128841-I
Vendor:Other Category:Other
The PD45128841-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of ...PD45128441-T
Vendor:Other Category:Other
The PD45128441-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...PD45128441-I
Vendor:Other Category:Other
The PD45128441-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of ...PD45128163-T
Vendor:Other Category:Other
The PD45128163-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...PD45128163-SU
Vendor:Other Category:Other
The PD45128163-SU is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 2,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAMs of PD45128163-SU achieved high-speed data transfer us...PD45128163-I
Vendor:Other Category:Other
The PD45128163-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs ach...PD-45
Vendor:Other Category:Other
PD45
Vendor:Other Category:Other
PD4437
Vendor:OSRAM Opto Semiconductors Inc Category:Optoelectronics
DISPLAY PROGR 4CHAR 5X7 BRT GRNThe PD4437 is four digit display system modules. The characters are 0.20" by 0.14"(PD243X), 0.27" by 0.20" (PD353X), and 0.45" by 0.27"(PD443X) 5x7 dot matrix arrays constructed with the latest solid state technology in ...PD4436
Vendor:Other Category:Other
The PD4436 is four digit display system modules. The characters are 0.20" by 0.14"(PD243X), 0.27" by 0.20" (PD353X), and 0.45" by 0.27"(PD443X) 5x7 dot matrix arrays constructed with the latest solid state technology in ...