2N6039

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 100 uA
Package / Case : SOT-32


Features:

2N6036ISASGS-THOMSONPREFERRED SALESTYPE
COMPLEMENTARYPNP-NPNDEVICES
INTEGRATEDANTIPARALLEL COLLECTOR-EMITTERDIODE




Application

GENERALPURPOSESWITCHING
GENERALPURPOSEAMPLIFIER




Specifications

Symbol	Parameter		Value	Unit
		PNP	2N6036
		NPN	2N6039
VCBO	Collector-BaseVoltage(IE=0)		80	V
VCEO	Collector-EmitterVoltage(IB=0)		80	V
VEBO	Emitter-BaseVoltage(IC=0)		5	V
IC	CollectorCurrent		4	V
ICM	CollectorPeakCurrent		8	V
IB	BaseCurrent		0.1	V
Ptot	TotalDissipationat Tc25		40	W
Tstg	StorageTemperature		-65to150
Tj	Max.OperatingJunctionTemperature		150

Description

The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package.




Parameters:

Technical/Catalog Information	2N6039
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6039 2N6039 497 2560 5 ND 49725605ND 497-2560-5