2N7002ET1G, US $ .03-.1 , ON Semiconductor, 2N7002ET1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148920 Detail

2N7002ET1G: MOSFET NFET SOT23 60V 115mA 7mOhm

2N7002ET1G Data Sheet

US $ .03~.1 / Piece | Get Latest Price

Part Number:: 2N7002ET1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.26 A
Resistance Drain-Source RDS (on) :	2500 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 2500 mOhms
Continuous Drain Current : 0.26 A

Parameters:

Technical/Catalog Information	2N7002ET1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	260mA
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 240mA, 10V
Input Capacitance (Ciss) @ Vds	26.7pF @ 25V
Power - Max	300mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	0.81nC @ 5V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002ET1G 2N7002ET1G 2N7002ET1GOSDKR ND 2N7002ET1GOSDKRND 2N7002ET1GOSDKR

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