MOSFET N-Chan Enhancement Mode Field Effect
2N7002T: MOSFET N-Chan Enhancement Mode Field Effect
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.115 A | ||
| Resistance Drain-Source RDS (on) : | 7500 mOhms at 5 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-523F-3 | Packaging : | Reel |
| Part Number | 2N7002T |
| Config/ Polarity |
N |
| PD (W) |
0.15 |
| VDSS (V) |
60 |
| VGSS (+/-) (V) |
20 |
| ID (A) |
0.115 |
| RDS(on) Max () @ VGS; 1.8V | |
| RDS(on) Max () @ VGS; 2.5V | |
| RDS(on) Max () @ VGS; 4.0V | |
| RDS(on) Max () @ VGS; 4.5V | |
| RDS(on) Max () @ VGS; 5V | 7.5 |
| RDS(on) Max () @ VGS; 10.0V | |
| VGS(th) (V) |
2 |
| Ciss (typ) (pF) |
22 |
| Qg (typ) (nC) @ VGS; 4.5V |
|
| Qg (typ) (nC) @ VGS; 5V |
|
| Qg (typ) (nC) @ VGS; 10V |
| Technical/Catalog Information | 2N7002T |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 115mA |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 200mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-523F |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N7002T 2N7002T 2N7002TDKR ND 2N7002TDKRND 2N7002TDKR |