Position: Home  > All Categories> Integrated Circuits (ICs) > 2SJ200-Y(F)

2SJ200-Y(F)

MOSFET P-CH 180V 10A TO-3PN

product image

2SJ200-Y(F) Picture
See larger image
SeekIC No. : 003430978 Detail

2SJ200-Y(F): MOSFET P-CH 180V 10A TO-3PN

2SJ200-Y(F) Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SJ200-Y(F)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 180V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: - DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 30V
Power - Max: 120W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 10A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Power - Max: 120W
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 1300pF @ 30V
Drain to Source Voltage (Vdss): 180V


Parameters:

Technical/Catalog Information2SJ200-Y(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)180V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 1300pF @ 30V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / Case2-16C1B (TO-247 N)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ200 Y F
2SJ200YF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Kits
IT243
UVSC-110-4E1
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Tapes, Adhesives
803
AC452-2
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Undefined Category
VI-B63-IU
X27 589
View more