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2SJ201

Features: ·High breakdown voltage : VDSS = −200 V·High forward transfer admittance : |Yfs| = 5.0 S (typ.)·Complementary to 2SK1530Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±20 V Drain current (Note 1) I...

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2SJ201: Features: ·High breakdown voltage : VDSS = −200 V·High forward transfer admittance : |Yfs| = 5.0 S (typ.)·Complementary to 2SK1530Specifications Parameter Symbol Rating Unit Drain...

2SJ201 Data Sheet

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Part Number:
2SJ201
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

·High breakdown voltage : VDSS = −200 V
·High forward transfer admittance : |Yfs| = 5.0 S (typ.)
·Complementary to 2SK1530


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±20 V
Drain current (Note 1) ID ±80 A
Power dissipation TC=25
PD

52
1.5

 W
Channel temperature Tch 150
Storage temperature Tstg -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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