Purchase 2SJ200, In-stock 2SJ200 From SeekIC.
MFG:TOSHIBA Package Cooled:TO-3P D/C:06+
- Table of contents:
2SJ200
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Suppliers
DataSheet
General Description
2SJ200 Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit |
| Drain−source voltage |
VDSS |
−180 |
V |
| Gate−source voltage |
VGSS |
±20 |
V |
| Drain current (Note 1) |
ID |
−10 |
A |
| Drain power dissipation (Tc = 25) |
PD |
120 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature range |
TSTG |
-55 ~ +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SJ200 Typical Application
High breakdown voltage : VDSS = −180 V
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Complementary to 2SK1529
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Complementary to 2SK1529
2SJ200
PDF/DataSheet Download
- Datasheet: 2SJ200
- File Size: 185756 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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