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2SJ200

ApplicationHigh breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SK1529Specifications Characteristics Symbol Rating Unit Drain−source voltage VDSS −180 V Gate−source voltage VGSS ±...

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2SJ200: ApplicationHigh breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SK1529Specifications Characteristics Symbol Rating Uni...

2SJ200 Data Sheet

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Part Number:
2SJ200
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Application

 High breakdown voltage : VDSS = −180 V
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Complementary to 2SK1529


Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−180
V
Gate−source voltage
VGSS
±20
V
Drain current (Note 1)
ID
−10
A
Drain power dissipation (Tc = 25)
PD
120
W
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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