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2SJ201-Y(F)

MOSFET MOSFET P-Ch 200V 12A Rdson 0.625 Ohm

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SeekIC No. : 00164303 Detail

2SJ201-Y(F): MOSFET MOSFET P-Ch 200V 12A Rdson 0.625 Ohm

2SJ201-Y(F) Data Sheet

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Part Number:
2SJ201-Y(F)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Bulk    

Description

Resistance Drain-Source RDS (on) :
Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Bulk
Continuous Drain Current : 12 A
Package / Case : TO-3P
Drain-Source Breakdown Voltage : - 200 V


Parameters:

Technical/Catalog Information2SJ201-Y(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 1500pF @ 30V
Power - Max150W
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-3P(L) (2-21F1B)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ201 Y F
2SJ201YF
2SJ201YF ND
2SJ201YFND
2SJ201YF



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