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ACT-S512K32V

Features: 4 Low Power CMOS 512K x 8 SRAMs in one MCMOverall configuration as 512K x 32Input and Output TTL Compatible17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special OrderFull Military (-55°C to +125°C) Temperature Range+3.3V Power SupplyChoice of Surface Mount or PGA Type Co-fire...

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ACT-S512K32V: Features: 4 Low Power CMOS 512K x 8 SRAMs in one MCMOverall configuration as 512K x 32Input and Output TTL Compatible17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special OrderFull Milit...

ACT-S512K32V Data Sheet

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Part Number:
ACT-S512K32V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

4 Low Power CMOS 512K x 8 SRAMs in one MCM
Overall configuration as 512K x 32
Input and Output TTL Compatible
17, 20, 25, 35 & 45ns Access Times, 15ns Available by
Special Order
Full Military (-55°C to +125°C) Temperature Range
+3.3V Power Supply
Choice of Surface Mount or PGA Type Co-fired Packages: 68Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max
thickness available, contact factory for details) (Drops into the  68 Lead JEDEC .99"SQ CQFJ footprint)
 66Pin, PGA-Type (P1), 1.38"SQ x .245"max 66Pin, PGA-Type (P7), 1.08"SQ x .185"max
Internal Decoupling Capacitors
DESC SMD# Pending


Specifications

Symbol

Rating

Range

Units

TC


Case Operating Temperature          Speed 15ns  
                                                                    Speed 17ns to 45ns

-40 to +85
-55 to +125

°C
°C

TSTG

Storage Temperature

-65 to +150

°C

PD

Maximum Package Power Dissipation
P1,P7 Packages
F2 Package

3.0
2.7

W
W

J-C

Hottest Die, Max Thermal Resistance - Junction to Case
P1,P7 Packages
F2 Package

3.0
9.0

°C/W
°C/W

VG

Maximum Signal Voltage to Ground

-0.5 to +4.6

V

TL

Maximum Lead Temperature (10 seconds)

300

°C




Description

The ACTS512K32V is a High Speed 4 megabit CMOS SRAM Multichip Module (MCM) designed for full temperature range, 3.3V Power Supply, military, space, or high reliability mass memory and fast cache applications.

The MCM of ACT-S512K32V can be organized as a 512K x 32 bits, 1M x 16 bits or 2M x 8 bits device and is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low. Reading is accomplished when WE  is high and CE and output enable (OE) are both low. Access time grades of 17ns, 20ns, 25ns, 35ns and 45ns maximum are standard.

The products ACT-S512K32V are designed for operation over the temperature range of -55°C to +125°C and screened under the full  military environment.  DESC Standard Military Drawing (SMD) part numbers are pending. 

The ACT-S512K32V is manufactured in Aeroflex's 80,000ft2    MIL-PRF-38534 certified facility in Plainview, N.Y.




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