AH-312

The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband- tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH312 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the AH312 an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.

The features of AH312 are 400 - 2300 MHz, +33 dBm P1dB, +51 dBm output IP3, 18 dB gain @ 900MHz, single positive supply (+5V), MTTF>100 years. And it can be final stage amplifiers for repeaters, mobile infrastructure. The maximum ratings of AH312 are operating case temperature -40 to 85, storage temperature -65 to 150, DC voltage +8V, continous RF input power +28dBm, junction temperature +250, device power 8W, device current 1400mA.(operation of this device above any of these parameters may cause permanent damage.)