AO4407A

MOSFET P-CH -30V -12A 8-SOIC

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SeekIC No. : 003430235 Detail

AO4407A: MOSFET P-CH -30V -12A 8-SOIC

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US $ .16~.4 / Piece | Get Latest Price
Part Number:
AO4407A
Mfg:
Supply Ability:
5000

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Upload time: 2024/4/19

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 20V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 39nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2600pF @ 15V
Power - Max: 3.1W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 12A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 3.1W
Gate Charge (Qg) @ Vgs: 39nC @ 10V
Supplier Device Package: 8-SOIC
Input Capacitance (Ciss) @ Vds: 2600pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 20V


Pinout

  Connection Diagram




Description

The AO4407A is designed as one kind of P-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 11 m (VGS = -10 V);(2)RDS(ON) < 13 m (VGS = -10.0 V);(3)ID = -12.0 A (VGS = -10 V);(4)VDS (V) = -30 V.

The absolute maximum ratings of the AO4407A can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 25 V;(3)Continuous Drain Current TA=25°C: -12.0 to -9.2 A;(4)Continuous Drain Current TA=70°C: -10.0 to -7.4 A;(5)Pulsed Drain Current: -60 A;(6)Power Dissipation TA=25°C: 3.1 to 1.7 W;(7)Power Dissipation TA=70°C: 2.0 to 1.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4407A can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -10 uA;(3)Gate-Body leakage current: +/- 100 nA;(4)Gate Threshold Voltage: -1.7 to -3 V;(5)On state drain current: -60 A;(6)Forward Transconductance: 21 S;(7)Diode Forward Voltage: -0.70 to -1.0 V;(8)Maximum Body-Diode Continuous Current: -3.0 A. If you want to know more information such as the electrical characteristics about the AO4407A, please download the datasheet in www.seekic.com or www.chinaicmart.com.






Parameters:

Technical/Catalog InformationAO4407A
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs11 mOhm @ 12A, 20V
Input Capacitance (Ciss) @ Vds 2600pF @ 15V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO4407A
AO4407A
785 1022 2 ND
78510222ND
785-1022-2



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