AO4422L

The AO4422L is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 15 m (VGS = 10 V);(2)RDS(ON) < 24 m (VGS = 4.5 V);(3)ID = 11 A (VGS = 10V);(4)VDS (V) = 30 V.

The absolute maximum ratings of the AO4422L can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: 11 A;(4)Continuous Drain Current TA=70°C: 9.3 A;(5)Pulsed Drain Current: 50 A;(6)Power Dissipation TA=25°C: 3 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4422L can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 1 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 1 to 3 V;(5)On state drain current: 40 A;(6)Forward Transconductance: 25 S;(7)Diode Forward Voltage: 0.75 to 1 V;(8)Maximum Body-Diode Continuous Current: 4.3 A. If you want to know more information such as the electrical characteristics about the AO4422L, please download the datasheet in www.seekic.com or www.chinaicmart.com.