BFG425W

Note
1. T_s is the temperature at the soldering point of the emitter pins.

The BFG425W is designed as one kind of NPN 25 GHz wideband transistor which produced by the Philips Semiconductors with some features such as:(1)high power gain;(2)low noise figure;(3)high transition frequency;(4)gold metallization ensures excellent reliability.NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.It can be used in RF front end,wideband applications;e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.);radar detectors;pagers;satellite television tuners (SATV) and high frequency oscillators.

The quick reference data of the BFG425W can be summarized as:(1)collector-base voltage:10 V;(2)collector-emitter voltage:4.5 V;(3)DC collector current:25 mA;(4)total power dissipation:135 mW;(5)DC current gain:50 to 120;(6)feedback capacitance(IC=0;VCB=2 V;f=1 MHz):95 fF;(7)transition frequency(IC=25 mA; VCE=2 V;f=2 GHz;):95 GHz;(8)maximum unilateral power gain(IC=25 mA;VCE=2 V;f=2 GHz;):20 dB;(9)storage temperature:-65 to +150 °C;(10)junction temperature:150 °C;(11)thermal resistance from junction to soldering point:350 K/W.If you want to know more information such as the electrical AC characteristics about the BFG425W,please download the datasheet in www.seekdatasheet.com .

NPN double polysilicon wideband transistor BFG425W with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.