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MFG:TOSHIBA  Package Cooled:MODULE  D/C:121  

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Part Number: BLF1049

 

MFG: TOSHIBA

Package Cooled: MODULE

D/C: 121

Description: 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.


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BLF1049 General Description


125 W LDMOS power transistor for base station  applications at frequencies from 800 MHz to 1000 MHz.

BLF1049 Maximum Ratings

SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage - 75 V
VGS gate-source voltage - ±15 V
Tstg storage temperature -65 150 °C
Tj junction temperature - 200 °C

BLF1049 Features

` Typical performance at a supply voltage of 27 V:
   1-tone CW; IDQ = 1000 mA
  Output power = 125 W
  Gain = 16.5 dB
  Efficiency = 54%
  EDGE output power = 45 W (AV)
  ACPR400 = -64 dBc at 400 kHz (EDGE; IDQ = 750 mA)
  EVM = 2% rms (AV) (EDGE; IDQ = 750 mA)
` Easy power control
` Excellent ruggedness
` High power gain
` Excellent thermal stability
` Designed for broadband operation (800 to 1000 MHz)
` Internally matched for ease of use.

BLF1049 Typical Application

· RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.

BLF1049 Connection Diagram

BLF1049 Connection Diagram

BLF1049 datasheet

BLF1049
PDF/DataSheet Download

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