BSO203P

MOSFET P-CH -20 V -8.2 A

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SeekIC No. : 00159338 Detail

BSO203P: MOSFET P-CH -20 V -8.2 A

floor Price/Ceiling Price

US $ .38~.44 / Piece | Get Latest Price
Part Number:
BSO203P
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1730
  • 1730~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $.44
  • $.41
  • $.4
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 8.2 A
Resistance Drain-Source RDS (on) : 0.021 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSO-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 8.2 A
Resistance Drain-Source RDS (on) : 0.021 Ohms
Package / Case : DSO-8


Features:

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated



Specifications

Parameter
Symbol
Values
Unit
Continuous drain current
TA=25°C
TA=70°C
ID

-8.2
-6.6

A
Pulsed drain current
TA=25°C
I Dpulse

-32.8

Avalanche energy, single pulse
ID=12.7 A , VDD=25V, RGS=25
EAS
97
mJ
Reverse diode dv/dt
IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C
dv/dt
-6
kV/s
Gate source voltage
VGS
±12
V

Power dissipation
TA=25°C

Ptot

2

W

Operating and storage temperature
T j , T stg
-55 ... +150
°C
IEC climatic category, DIN IEC 68-1
55/150/56




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