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BST84

Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers...

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SeekIC No. : 004302451 Detail

BST84: Features: · Direct interface to C-MOS, TTL,etc.· High-speed switching· No second breakdownApplicationThese products are not designed for use in life support appliances, devices, or systems where mal...

BST84 Data Sheet

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Part Number:
BST84
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown


Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Specifications

Drain-source voltage VDS max. 2000 V
Gate-source voltage (open drain) ±VGSO max. 20 V
Drain current (DC) ID max. 250 mA
Drain current (peak) IDM max. 800 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 1 W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 125 K/W
Note
1. Transistor mounted on a ceramic substrate of 2.5 cm2 and thickness of 0.7 mm.


Description

N-channel vertical D-MOS transistor BST84 in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.




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