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BUK78150-55A

Features: `TrenchMOS™ technology`Q101 compliant`150 rated` Standard level compatible.Application·Automotive and general purpose power switching:·12 V and 24 V loads· Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (D...

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BUK78150-55A: Features: `TrenchMOS™ technology`Q101 compliant`150 rated` Standard level compatible.Application·Automotive and general purpose power switching:·12 V and 24 V loads· Motors, lamps and solenoi...

BUK78150-55A Data Sheet

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Part Number:
BUK78150-55A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

` TrenchMOS™ technology
` Q101 compliant
` 150 rated
` Standard level compatible.


Application

· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tsp = 25 ; VGS = 10V;
Figure 2 and 3		 -
 5.5

A
Tsp = 100 ; VGS = 10 V; Figure 2 - 3.8 A
IDM peak drain current Tsp = 25 ; pulsed; tp 10 s; Figure 3 - 22 A
Ptot total power dissipation Tsp = 25 ; Figure 1 - 8 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tsp= 25





-


5.5

 
A
IDRM pulsed reverse drain current Tsp= 25 ; pulsed; tp 10 s - 22 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy unclamped inductive load; ID =5A;
VDS 55V; VGS = 10 V;
RGS = 50 ; starting Tsp= 25 		- 25 mJ
 



Description

N-channel enhancement mode field-effect power transistor BUK78150-55A in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK78150-55A in SOT223 (SC-73).


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