BUK7880-55A

The BUK7880-55A is designed as one kind of N-channel enhancement mode logic level field-effect power transistor that belongs to the BUK7880-55 family. This device is intended for use in automotive and general purpose switching applications.

The absolute maximum ratings of the BUK7880-55A can be summarized as:(1)Drain-source voltage: 55 V;(2)Drain-gate voltage: 55 V;(3)Gate-source voltage: 16 V;(4)Drain current (DC): 7.5 A or 3.5 A;(5)Drain current (pulse peak value): 40 A;(6)Storage & operating temperature: - 55 to 150 °C.

And the static characteristics of the BUK7880-55A can be summarized as:(1)Drain-source breakdown voltage: 55 V;(2)Gate threshold voltage: 2 to 4 V;(3)Zero gate voltage drain current: 0.05 uA;(4)Gate source leakage current: 0.04 uA;(5)Gate-source breakdown voltage: 16 V;(6)Drain-source on-state resistance:148 m. If you want to know more information such as the electrical characteristics about the BUK7880-55A, please download the datasheet in www.seekic.com or www.chinaicmart.com .