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BUK7C10-75AITE

Features: *Q101 compliant *Integrated temperature sensor*ESD protection *Integrated current sensor.Application*Variable Valve Timing for engines *Electrical Power Assisted Steering *Automotive and power switching *Fan control.Specifications Symbol Parameter Conditions Min Max ...

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BUK7C10-75AITE: Features: *Q101 compliant *Integrated temperature sensor*ESD protection *Integrated current sensor.Application*Variable Valve Timing for engines *Electrical Power Assisted Steering *Automotive ...

BUK7C10-75AITE Data Sheet

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Part Number:
BUK7C10-75AITE
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

* Q101 compliant

* Integrated temperature sensor
* ESD protection

* Integrated current sensor.




Application

* Variable Valve Timing for engines

* Electrical Power Assisted Steering

* Automotive and power switching

* Fan control.




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 75 V
VDGS drain-gate voltage (DC) IDG = 250 mA - 75 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC)

Tmb = 25 °C; VGS = 10 V;

Figure 2 and 3

 - 114 A
- 75 A
Tmb = 100 °C; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current
Tmb = 25 °C; pulsed; tp £ 10 ms; - 456 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA
tp = 5 ms; d = 0.01 - 50 mA
Tstg storage temperature -55 +175 °C
Tj junction temperature -55 +175 °C
Source-drain diode
IDR reverse drain current Tmb = 25 °C - 114 A
- 75 A
IDRM peak reverse drain current T mb = 25 °C; pulsed; tp £ 10 ms - 466 A
Avalanche ruggedness
IDR reverse drain current

unclamped inductive load; ID = 75 A;

VDS £ 75 V; VGS = 10 V;

RGS = 50 W; starting Tj = 25 °C

 739 mJ
IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp £ 10 ms - 466 A
Electrostatic discharge
Vesd electrostatic discharge voltage; 1,2,4,6,7 pins
Human Body Model; C = 100 pF;R = 1.5 kW		 - 6 kV



Description

N-channel enhancement mode field-effect power transistor BUK7C10-75AITE in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Also includes TrenchPLUS current sensing, and diodes for ESD and temperature protection.


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