BUK7L06-34ARC

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 34 V
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0053 Ohms


Features:

* ESD and overvoltage protection
* Internal gate resistor
* Q101 compliant
*On-state resistance 5.1 mΩ (typ).


Application

*12 V loads
*Motors, lamps and solenoids.


Description

N-channel enhancement mode field-effect power transistor BUK7L06-34ARC in a plastic package using TrenchMOS™ technology, featuring very low on-state resist ance, integral gate resistor, ESD protection diodes and clamping diodes that are guaranteed to prevent the MOSFET avalanching.