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- Table of contents:
BUZ103
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Suppliers
DataSheet
General Description
BUZ103 Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
| Continuous drain current TC = 23 °C |
ID |
40 |
A |
| Pulsed drain current TC = 25 °C |
IDpuls |
160 | |
| Avalanche energy, single pulse ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj= 25 °C |
EAS |
100 |
mJ |
| Reverse diode dv/dt IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C |
dv/dt |
6 |
kV/µs |
| Gate source voltage | VGS |
± 20 |
V |
| Power dissipation TC = 25 °C |
Ptot |
120 |
W |
| Operating temperature | Tj |
-55 ... + 175 |
°C |
| Storage temperature | Tstg |
-55 ... + 175 | |
| Thermal resistance, chip case | RthJC |
1.25 |
K/W |
| Thermal resistance, chip to ambient | RthJA |
75 | |
| DIN humidity category, DIN 40 040 | E |
||
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
BUZ103
PDF/DataSheet Download
- Datasheet: BUZ103
- File Size: 190899 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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