BUZ103

Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 40 A Pulsed drain currentTC = 25 °C IDpuls 160 Avalanche energy, single pulseID = 40 A, VDD = 25 V, RGS = 25 ΩL = 63 µH, Tj= 25 °C EAS 100 mJ Reverse diode...

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BUZ103: Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 40 A Pulsed drain currentTC = 25 °C IDpuls 160 Avalanche energy, single pulseID = 40 ...

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Part Number:
BUZ103
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Specifications

Parameter
Symbol
Values
Unit
Continuous drain current
TC = 23 °C
ID

40
A
Pulsed drain current
TC = 25 °C
IDpuls

160
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj= 25 °C
EAS


100
mJ
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt


6
kV/µs
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 °C
Ptot

120
W
Operating temperature
Tj
-55 ... + 175
°C
Storage temperature
Tstg
-55 ... + 175
Thermal resistance, chip case
RthJC
1.25
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 175 / 56



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