Purchase BUZ103S-4, In-stock BUZ103S-4 From SeekIC.
MFG:110 Package Cooled:SIEMENS
- Table of contents:
BUZ103S-4
-
Suppliers
DataSheet
General Description
BUZ103S-4 Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current one channel active TA = 25 |
ID |
5.3 |
A |
| Pulsed drain current one channel active TA = 25 |
IDpuls |
21.2 | |
| Avalanche energy, single pulse ID = 5.3 A, VDD = 25 V, RGS = 25 L =9.97mH, Tj = 25 |
EAS |
140 |
mJ |
| Reverse diode dv/dt IS =5.3A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt |
6 |
kV/s |
| Gate source voltage | VGS |
± 20 |
V |
| Power dissipation ,one channel active TA = 25 |
Ptot |
2.4 |
W |
| Operating temperature | Tj |
-55 ... + 175 |
|
| Storage temperature | Tstg |
-55 ... + 175 | |
| IEC climatic category, DIN IEC 68-1 |
55 / 175 / 56 |
BUZ103S-4 Features
• Quad-channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
BUZ103S-4 Connection Diagram
BUZ103S-4
PDF/DataSheet Download
- Datasheet: BUZ103S-4
- File Size: 93232 KB
- Manufacturer: Infineon
- Click here to Download
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