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BUZ10L

Specifications Parameter Symbol Values Unit Continuous drain current TC = 26 °C ID 23 A Pulsed drain currentTC = 25 °C IDpuls 92 Avalanche energy, single pulseID = 40 A, VDD = 25 V, RGS = 25 ΩL = 63 µH, Tj= 25 °C EAS 8 mJ Avalanche current,limited by Tjmax ...

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BUZ10L: Specifications Parameter Symbol Values Unit Continuous drain current TC = 26 °C ID 23 A Pulsed drain currentTC = 25 °C IDpuls 92 Avalanche energy, single pulseID = 40 A, VDD = ...

BUZ10L Data Sheet

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Part Number:
BUZ10L
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5000

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Specifications

Parameter Symbol Values Unit
Continuous drain current
TC = 26 °C		 ID
23		 A
Pulsed drain current
TC = 25 °C		 IDpuls
92
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj= 25 °C		 EAS

8		 mJ
Avalanche current,limited by Tjmax IAR 23 A
Avalanche energy,periodic limited by Tjmax EAR 1.3 mJ
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C		 dv/dt

6
 kV/µs
Gate source voltage VGS ± 14 V
Gate-source peak voltage,aperiodic Vgs ± 20
Power dissipation
TC = 25 °C		 Ptot
75		 W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040   E  
IEC climatic category, DIN IEC 68-1   55 / 150 / 56



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