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MFG:SIEMENS  Package Cooled:TO-220  D/C:08+  

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Part Number: BUZ10L

 

MFG: SIEMENS

Package Cooled: TO-220

D/C: 08+

 

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BUZ10L Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC = 26 °C
ID
23
A
Pulsed drain current
TC = 25 °C
IDpuls
92
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj= 25 °C
EAS

8
mJ
Avalanche current,limited by Tjmax IAR 23 A
Avalanche energy,periodic limited by Tjmax EAR 1.3 mJ
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
dv/dt

6
kV/µs
Gate source voltage VGS ± 14 V
Gate-source peak voltage,aperiodic Vgs ± 20
Power dissipation
TC = 25 °C
Ptot
75
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040   E  
IEC climatic category, DIN IEC 68-1   55 / 150 / 56

BUZ10L datasheet

BUZ10L
PDF/DataSheet Download

  • Datasheet: BUZ10L
  • File Size: 133836 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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