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BUZ11

MOSFET TO-220 N-CH 50V 33A

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SeekIC No. : 00166834 Detail

BUZ11: MOSFET TO-220 N-CH 50V 33A

BUZ11 Data Sheet

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Part Number:
BUZ11
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C
 ID
 30 A
Pulsed drain current
TC = 25 °C		 IDpuls 120
Avalanche current,limited by Tjmax
IAR		 30
Avalanche energy,periodic limited by Tjmax EAR
 1.9 mJ
Avalanche energy, single pulse
ID =30 A, VDD = 25 V, RGS = 25
L = 15.6 µH, Tj= 25 °C		 EAS 14
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C		 Ptot 75 W
Operating temperature Tj 55 . + 150 °C
Storage temperature range Tstg 55 . + 150
Thermal resistance, chip case
 RthJC 1.67 K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
   E  
IEC climatic category, DIN IEC 68-1  
55 / 150 / 56



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