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| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 25 °C |
ID |
30 | A |
| Pulsed drain current TC = 25 °C |
IDpuls | 120 | |
| Avalanche current,limited by Tjmax |
IAR |
30 | |
| Avalanche energy,periodic limited by Tjmax | EAR |
1.9 | mJ |
| Avalanche energy, single pulse ID =30 A, VDD = 25 V, RGS = 25 L = 15.6 µH, Tj= 25 °C |
EAS | 14 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 75 | W |
| Operating temperature | Tj | 55 . + 150 | °C |
| Storage temperature range | Tstg | 55 . + 150 | |
| Thermal resistance, chip case |
RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJA |
75 | |
| DIN humidity category, DIN 40 040 |
E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
BUZ11
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