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Part Number: BUZ11A

 

 

 

 

 

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BUZ11A Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC =25
ID 26 A
Pulsed drain current
TC = 25
IDpuls 104
Avalanche current,limited by Tjmax IAR 30
Avalanche energy,periodic limited by Tjmax
EAR

1.9

mJ

Avalanche energy, single pulse
ID =30A, VDD =25V, RGS = 25
L=15.6 H,Tj = 25

EAS 14
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25
Ptot 75 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ11A Features

• N channel
• Enhancement mode
• Avalanche-rated

BUZ11A datasheet

BUZ11A
PDF/DataSheet Download

  • Datasheet: BUZ11A
  • File Size: 121240 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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