CHA2157

Features:

·3.5 dB noise figure
·10 dB ± 1dB gain
·15 dBm output power (-1dB gain comp.)
·DC power consumption, 80mA @ 3.3V
·Chip size : 1.71 x 1.04 x 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4.0	V
Id	Drain bias current	150	mA
Vg	Gate bias voltage	-2.0 to +0.4	V
Pin	Maximum peak input power overdrive (2)	TBD
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.

CHA2157 is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA2157 is available in chip form.