CPV363M4K

IGBT SIP MODULE 600V 6A IMS-2

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CPV363M4K Picture
SeekIC No. : 004131073 Detail

CPV363M4K: IGBT SIP MODULE 600V 6A IMS-2

floor Price/Ceiling Price

US $ 25.51~25.51 / Piece | Get Latest Price
Part Number:
CPV363M4K
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~160
  • Unit Price
  • $25.51
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Processor Series : SCF5249 Series: -
Manufacturer: Vishay Semiconductors IGBT Type: -
Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A Current - Collector (Ic) (Max): 11A
Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
Power - Max: 36W Input: Standard
NTC Thermistor: No Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2    

Description

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Power - Max: 36W
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
Current - Collector (Ic) (Max): 11A
Input Capacitance (Cies) @ Vce: 0.74nF @ 30V


Features:

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve



Specifications

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
11
6.0
22
22
6.1
22
10
± 20
2500
36
14
V


A



µs
V
VRMS
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV363M4K are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.




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