CPV364M4KPBF

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Current - Collector (Ic) (Max): 24A
Input Capacitance (Cies) @ Vce: 1.6nF @ 30V
Power - Max: 63W


Description

The CPV364M4KPbF is designed as one kind  of IGBT SIP modules (short circuit rated ultrafast IGBT). The IGBT technology is the key to Vishays HPP advanced line of IMS (insulated metal substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV364M4KPbF has six features. (1)Short circuit rated ultrafast: optimized for high speed > 5.0kHz, and short circuit rated to 10s at 125 °C, Vge=15V. (2)Fully isolated printed circuit board mount package. (3)Switching-loss rating includes all "tail" losses. (4)HEXFRED soft ultrafast diodes. (5)Totally lead (Pb)-free and RoHS compliant. (6)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of CPV364M4KPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 24A at Tc=25°C and would be 13A at Tc=100°C. (3)Its pulsed collector current would be 48A. (4)Its clamped inductive load current would be 48A. (5)Its short circuit withstand time would be 9.3s. (6)Its gate to emitter voltage would be +/-20V. (7)Its isolation voltage would be 2500Vrms. (8)Its maximum power dissipation, each IGBT would be 63W at Tc=25°C and would be 25W at Tc=100°C. (9)Its operating junction and storage temperature range would be from -55°C to +150°C. (10)Its soldering temperature would be 300°C. (11)Its mounting torque would be from 5lbf ` in to 7lbf ` in. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of CPV364M4KPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coeff. of breakdown voltage would be typ 0.63V/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!