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Part Number: CY7C1049BN
Description: The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory...
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CY7C1049BN
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DataSheet
General Description
CY7C1049BN General Description
The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers.
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW).
The CY7C1049BN is available in a standard 400-mil-wide 36-pin SOJ package with center power and ground (revolutionary) pinout.
CY7C1049BN Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature .............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[2] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ....................................0.5V to VCC + 0.5V
DC Input Voltage[2].................................0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
not tested.)
Storage Temperature .............................65°C to +150°C
Ambient Temperature with
Power Applied..........................................55°C to +125°C
Supply Voltage on VCC to Relative GND[2] .... 0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[2] ....................................0.5V to VCC + 0.5V
DC Input Voltage[2].................................0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
CY7C1049BN Features
• High speed
- tAA = 12 ns
• Low active power
- 1320 mW (max.)
• Low CMOS standby power (Commercial L version)
- 2.75 mW (max.)
• 2.0V Data Retention (400 W at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
- tAA = 12 ns
• Low active power
- 1320 mW (max.)
• Low CMOS standby power (Commercial L version)
- 2.75 mW (max.)
• 2.0V Data Retention (400 W at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
CY7C1049BN Connection Diagram
CY7C1049BN-12VC
PDF/DataSheet Download
- Datasheet: CY7C1049BN-12VC
- File Size: 466933 KB
- Manufacturer: CYPRESS [Cypress Semiconductor]
- Click here to Download
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