MFG:FAIRCHILD Package Cooled:TO-263 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-263
D/C: 05+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
FDP4030L |
FDB4030L |
Units |
|
VDSS |
Drain-Source Voltage |
80 |
V | |
|
VGSS |
Gate-Source Voltage |
± 20 |
V | |
|
ID |
Drain Current - Continuous (Note 1)
- Pulsed (Note 1) |
3.0 |
A | |
|
60 | ||||
|
PD |
Total Power Dissipation @ TC = 25°C
Derate above 25°C |
37.5 |
W | |
|
0.25 |
W/°C | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-65 to 175 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
°C | |
FDB4030L
PDF/DataSheet Download
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