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FDB44N25

Features: • 44A, 250V, RDS(on) = 0.069Ω @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FDB44N25 Units VDSS Dr...

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SeekIC No. : 004341040 Detail

FDB44N25: Features: • 44A, 250V, RDS(on) = 0.069Ω @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Imp...

FDB44N25 Data Sheet

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Part Number:
FDB44N25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Description



Features:

• 44A, 250V, RDS(on) = 0.069Ω @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical  60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
FDB44N25
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
44
A
26.4
A
IDM
Drain Current - Pulsed                (Note 1)
176
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2) 
2055
mJ
IAR
Avalanche Current                      (Note 1)
44
A
EAR
Repetitive Avalanche Energy      (Note 1)                                        
30.7
mJ
dv/dt
Peak Diode Recovery dv/dt         (Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
                             - Derate above 25°C
307
2.45
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C



Description

These FDB44N25 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDB44N25 are well suited for high efficient switched mode power supplies and active power factor correction.




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