FDB4020P

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.068 Ohms at - 4.5 V


Features:

* -16 A, -20 V. R_DS(on)  = 0.08 @ V_GS = -4.5 V
                       R_DS(on)  = 0.11 @ V_GS  = -2.5 V.
*  Critical DC electrical parameters specified at elevated temperature.
*  High density cell design for extremely low R_DS(on)
*  TO-220 and TO-263 (D² PAK) package for both through hole and surface mount applications.
*  175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP4020P	FDB4020P	Units
VDSS	Drain-Source Voltage	-20		V
VGSS	Gate-Source Voltage	±8		V
ID	Drain Current - Continuous                       - Pulsed	-16		A
		-48
PD	Total Power Dissipation @ TC = 25	37.5		W
	Derate above 25	0.25		W/
TJ, TSTG	Operating and Storage Junction Temperature Range	-65 to +175

Description

  This FDB4020P P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also  be used in conjunction with DC-DC converters requiring P-Channel.

Parameters:

Technical/Catalog Information	FDB4020P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	80 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	665pF @ 10V
Power - Max	37.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB4020P FDB4020P