FDB42AN15A0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 35 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.036 Ohms at 10 V


Features:

•r_DS(ON) = 36mΩ (Typ.), V_GS = 10V, I_D = 12A
•Q _g(tot) = 33nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems 


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	150	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25, VGS = 10V)	35	A
	Continuous (TC = 100, VGS = 10V)	24
	Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)	5	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	90	mJ
PD	Power dissipation	150	W
	Derate above 25	1.00	W/°C
TJ, Tstg	Operating and Storage Temperature	-55 to 175	°C

Parameters:

Technical/Catalog Information	FDB42AN15A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	42 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2150pF @ 25V
Power - Max	150W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB42AN15A0 FDB42AN15A0