FDD6296

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0088 Ohms


Features:

50A, 30 V R _DS(ON) = 8.8 m     @ V_GS = 10 V
                   R _DS(ON) = 11.3  m @ V_GS = 4.5 V

Low gate charge

Fast switching

High performance trench technology for extremely
   low R_DS(ON)

Application

DC/DC converter
Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current @TC=25°C (Note 3)                                          @TA=25°C (Note 1a)                                          Pulsed         (Note 1a)	50	A
		15
PD	Power Dissipation @TC=25°C (Note 3)                              @TA=25°C (Note 1a)                              @TA=25°C (Note 1b)	100	W
		3.8
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDD6296 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDD6296
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	31.5nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6296 FDD6296