FDD6530A

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 21 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.032 Ohms


Features:

21 A, 20 V  R_DS(ON) = 32 m@ V_GS = 4.5 V
                  R_DS(ON) = 47 m@ V_GS = 2.5 V 

Low gate charge  (6.5 nC typical) 

Fast switching 

High performance trench technology for extremely
   low R_DS(ON)
.

Application

DC/DC converter 

Motor drives

Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current Continuous (Note 3)                        Pulsed       (Note 1a)	21	A
		100
PD	Power Dissipation     (Note 1)                                  (Note 1a)                                  (Note 1b)	33	W
		3.3
		1.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

This FDD6530A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.

Parameters:

Technical/Catalog Information	FDD6530A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	32 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	710pF @ 10V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6530A FDD6530A