FDD6670S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 64 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

·  64 A, 30 V RDS(ON) = 9 mW @ VGS = 10 V RDS(ON) = 12.5 mW @ VGS = 4.5 V
·  Includes SyncFET Schottky body diode
·  Low gate charge (17nC typical)
·  High performance trench technology for extremely low RDS(ON)
·  High power and current handling capability


Application

·  DC/DC converter
·  Motor Drives


Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 64 100 70 3.2 1.3 55 to +150	V
ID	Drain Current Continuous Pulsed	(Note 3) (Note 1a)		A
PD	Power Dissipation	(Note 1) (Note 1a) (Note 1b)		W
TJ, TSTG	Operating and Storage Temperature Range			°C

Description

The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.