MOSFET 30V NCH DPAK POWR TRENCH
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 55 A | ||
Resistance Drain-Source RDS (on) : | 8.6 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 55 100 60 3.1 1.3 55 to +150 |
V | |
ID |
Drain Current - Continuous - Pulsed |
(Note 3) |
A | |
PD |
Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
W | |
TJ, TSTG |
Operating and Storage Temperature Range |
°C |
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
Technical/Catalog Information | FDD6680AS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 12.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 15V |
Power - Max | 1.3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 29nC @ 15V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD6680AS FDD6680AS |