FDD6680AS

MOSFET 30V NCH DPAK POWR TRENCH

product image

FDD6680AS Picture
SeekIC No. : 00146477 Detail

FDD6680AS: MOSFET 30V NCH DPAK POWR TRENCH

floor Price/Ceiling Price

US $ .5~.8 / Piece | Get Latest Price
Part Number:
FDD6680AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.8
  • $.62
  • $.58
  • $.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 8.6 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 8.6 mOhms
Package / Case : TO-252AA
Continuous Drain Current : 55 A


Features:

• 55 A, 30 V RDS(ON) max= 10.5 mΩ @ VGS = 10 V RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability



Application

• DC/DC converter
• Low side notebook



Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
55
100
60
3.1
1.3
55 to +150
V
ID
Drain Current - Continuous
- Pulsed

(Note 3)
(Note 1a)

A
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
TJ, TSTG
Operating and Storage Temperature Range
°C



Description

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.




Parameters:

Technical/Catalog InformationFDD6680AS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 15V
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs29nC @ 15V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD6680AS
FDD6680AS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Industrial Controls, Meters
Power Supplies - Board Mount
Fans, Thermal Management
Cables, Wires
View more