MOSFET 30V N-Ch PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 55 A | ||
Resistance Drain-Source RDS (on) : | 0.011 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 55 100 60 3.1 1.3 55 to +150 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 3) (Note 1a) | ||
PD |
Power Dissipation | (Note 1) (Note 1a) (Note 1b) | ||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
RJC RJA RJA |
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient |
(Note 1) (Note 1a) (Note 1b) |
2.1 40 96 |
°C/W °C/W °C/W |
The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.